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NTHL1000N170M1 Datasheet

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ON Semiconductor · NTHL1000N170M1 File Size : 343.81KB · 6 hits

Features and Benefits


• Typ. RDS(on) = 960 mW
• Ultra Low Gate Charge (typ. QG(tot) = 14 nC)
• Low Effective Output Capacitance (typ. Coss = 11 pF)
• 100% Avalanche Tested
• RoHS Compliant Typical Applications
• Solar Inverters
• Electric Vehicle Charging Stations
• Electric Storing Systems
• SMPS (Switch Mode Power Sup.

NTHL1000N170M1 NTHL1000N170M1 NTHL1000N170M1
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SiC
MOSFET
NTHL1000N170M1
NTHL110N65S3F
NTHL190N65S3HF
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